volatile memory - PMC

Result Filters

You searched 8+ million full text articles

Try this search in 34+ million citations and abstracts

PMC Full-Text Search Results

Items: 1 to 20 of 21827

<< First< Prev

Page of 1092

Next >Last >>

Select item 101387891.

A double dissociation between savings and long-term memory in motor learning

Alkis M. Hadjiosif, J. Ryan Morehead, Maurice A. Smith

PLoS Biol. 2023 Apr; 21(4): e3001799. Published online 2023 Apr 27. doi: 10.1371/journal.pbio.3001799

PMCID:: PMC10138789

Abstract Article PDF–1.0M

Select item 74759002.

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

Qiao-Feng Ou, Bang-Shu Xiong, Lei Yu, Jing Wen, Lei Wang, Yi Tong

Materials (Basel) 2020 Aug; 13(16): 3532. Published online 2020 Aug 10. doi: 10.3390/ma13163532

PMCID:: PMC7475900

Abstract Article PDF–7.4M

Select item 91430143.

Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications

Haider Abbas, Jiayi Li, Diing Shenp Ang

Micromachines (Basel) 2022 May; 13(5): 725. Published online 2022 Apr 30. doi: 10.3390/mi13050725

PMCID:: PMC9143014

Abstract Article PDF–7.6M

Select item 85353354.

Volatile Oil Profile of Prickly Ash (Zanthoxylum) Pericarps from Different Locations in China

Yao Ma, Jieyun Tian, Yabing Chen, Ming Chen, Yulin Liu, Anzhi Wei

Foods. 2021 Oct; 10(10): 2386. Published online 2021 Oct 8. doi: 10.3390/foods10102386

PMCID:: PMC8535335

Abstract Article PDF–1.4M

Select item 108254985.

Progress of nanopreparation technology applied to volatile oil drug delivery systems

Zu-Wen Ye, Qi-Yue Yang, Qiao-Hong Lin, Xiao-Xia Liu, Feng-Qin Li, Hong-Da Xuan, Ying-Yan Bai, Ya-Peng Huang, Le Wang, Fang Wang

Heliyon. 2024 Jan 30; 10(2): e24302. Published online 2024 Jan 8. doi: 10.1016/j.heliyon.2024.e24302

PMCID:: PMC10825498

Abstract Article PDF–1.6M

Select item 106750206.

Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory

Bixin Li, Shiyang Zhang, Lan Xu, Qiong Su, Bin Du

Polymers (Basel) 2023 Nov; 15(22): 4374. Published online 2023 Nov 10. doi: 10.3390/polym15224374

PMCID:: PMC10675020

Abstract Article PDF–17M

Select item 109719787.

Intermittent-Aware Design Exploration of Systolic Array Using Various Non-Volatile Memory: A Comparative Study

Nedasadat Taheri, Sepehr Tabrizchi, Arman Roohi

Micromachines (Basel) 2024 Mar; 15(3): 343. Published online 2024 Feb 29. doi: 10.3390/mi15030343

PMCID:: PMC10971978

Abstract Article PDF–2.1M

Select item 104998328.

Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts

Jun Yu, Han Wang, Fuwei Zhuge, Zirui Chen, Man Hu, Xiang Xu, Yuhui He, Ying Ma, Xiangshui Miao, Tianyou Zhai

Nat Commun. 2023; 14: 5662. Published online 2023 Sep 13. doi: 10.1038/s41467-023-41363-x

PMCID:: PMC10499832

Abstract Article PDF–3.0M

Select item 95736479.

Stress-Induced Volatile Emissions and Signalling in Inter-Plant Communication

Joanah Midzi, David W. Jeffery, Ute Baumann, Suzy Rogiers, Stephen D. Tyerman, Vinay Pagay

Plants (Basel) 2022 Oct; 11(19): 2566. Published online 2022 Sep 29. doi: 10.3390/plants11192566

PMCID:: PMC9573647

Abstract Article PDF–5.0M

Select item 551603210.

Symmetry of learning rate in synaptic plasticity modulates formation of flexible and stable memories

Youngjin Park, Woochul Choi, Se-Bum Paik

Sci Rep. 2017; 7: 5671. Published online 2017 Jul 18. doi: 10.1038/s41598-017-05929-2

PMCID:: PMC5516032

Abstract Article PDF–3.6M

Select item 705497911.

Building memory devices from biocomposite electronic materials

Xuechao Xing, Meng Chen, Yue Gong, Ziyu Lv, Su-Ting Han, Ye Zhou

Sci Technol Adv Mater. 2020; 21(1): 100–121. Published online 2020 Feb 25. doi: 10.1080/14686996.2020.1725395

PMCID:: PMC7054979

Abstract Article PDF–2.5M

Select item 901867712.

Reconfigurable halide perovskite nanocrystal memristors for neuromorphic computing

Rohit Abraham John, Yiğit Demirağ, Yevhen Shynkarenko, Yuliia Berezovska, Natacha Ohannessian, Melika Payvand, Peng Zeng, Maryna I. Bodnarchuk, Frank Krumeich, Gökhan Kara, Ivan Shorubalko, Manu V. Nair, Graham A. Cooke, Thomas Lippert, Giacomo Indiveri, Maksym V. Kovalenko

Nat Commun. 2022; 13: 2074. Published online 2022 Apr 19. doi: 10.1038/s41467-022-29727-1

PMCID:: PMC9018677

Abstract Article PDF–2.9M

Select item 723121613.

Memristive Non-Volatile Memory Based on Graphene Materials

Zongjie Shen, Chun Zhao, Yanfei Qi, Ivona Z. Mitrovic, Li Yang, Jiacheng Wen, Yanbo Huang, Puzhuo Li, Cezhou Zhao

Micromachines (Basel) 2020 Apr; 11(4): 341. Published online 2020 Mar 25. doi: 10.3390/mi11040341

PMCID:: PMC7231216

Abstract Article PDF–4.6M

Select item 1018085214.

Aroma Components in Horticultural Crops: Chemical Diversity and Usage of Metabolic Engineering for Industrial Applications

Farhat Abbas, Yiwei Zhou, Dylan O’Neill Rothenberg, Intikhab Alam, Yanguo Ke, Hui-Cong Wang

Plants (Basel) 2023 May; 12(9): 1748. Published online 2023 Apr 24. doi: 10.3390/plants12091748

PMCID:: PMC10180852

Abstract Article PDF–1.7M

Select item 858820915.

Contribution of Polymers to Electronic Memory Devices and Applications

Subin Lee, Somi Kim, Hocheon Yoo

Polymers (Basel) 2021 Nov; 13(21): 3774. Published online 2021 Oct 31. doi: 10.3390/polym13213774

PMCID:: PMC8588209

Abstract Article PDF–4.8M

Select item 1098076016.

Inkjet printed IGZO memristors with volatile and non-volatile switching

Miguel Franco, Asal Kiazadeh, Jonas Deuermeier, S. Lanceros-Méndez, Rodrigo Martins, Emanuel Carlos

Sci Rep. 2024; 14: 7469. Published online 2024 Mar 29. doi: 10.1038/s41598-024-58228-y

PMCID:: PMC10980760

Abstract Article PDF–5.1M

Select item 717680817.

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Furqan Zahoor, Tun Zainal Azni Zulkifli, Farooq Ahmad Khanday

Nanoscale Res Lett. 2020; 15: 90. Published online 2020 Apr 22. doi: 10.1186/s11671-020-03299-9

PMCID:: PMC7176808

Abstract Article PDF–2.7M

Select item 921708618.

Palimpsest memories stored in memristive synapses

Christos Giotis, Alexander Serb, Vasileios Manouras, Spyros Stathopoulos, Themis Prodromakis

Sci Adv. 2022 Jun; 8(25): eabn7920. Published online 2022 Jun 22. doi: 10.1126/sciadv.abn7920

PMCID:: PMC9217086

Abstract Article PDF–8.0M

Select item 804202119.

A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect

Shamiul Alam, Md Shafayat Hossain, Ahmedullah Aziz

Sci Rep. 2021; 11: 7892. Published online 2021 Apr 12. doi: 10.1038/s41598-021-87056-7

PMCID:: PMC8042021

Abstract Article PDF–6.1M

Select item 482993420.

Highly Stretchable Non-volatile Nylon Thread Memory

Ting-Kuo Kang

Sci Rep. 2016; 6: 24406. Published online 2016 Apr 13. doi: 10.1038/srep24406

PMCID:: PMC4829934

Abstract Article PDF–1.0M

<< First< Prev

Page of 1092

Next >Last >>

Supplemental Content

Filter your results:

Manage Filters

PMC Images search for volatile memory

Figure 1

Human memory system and device characterization. a) Proposed human memory system with three memory types, including sensory memory, short‐term and long‐term memory. The retention time in human memory system ranges from millisecond to years, indicating an integration of volatile and nonvolatile characteristic in human brain. Three memory types show similarity in synapse plasticity with different retention time. b) Schematic structure of the device. The van der Waals heterostructure composed of MoS₂/hBN/graphene/hBN layers. Top gate operation dominates the volatile characteristic and back gate operation dominates the nonvolatile characteristic. c) A false‐color SEM image of the device. The scale bar is 5 µm.

Time‐Tailoring van der Waals Heterostructures for Human Memory System Programming

Adv Sci (Weinh). 2019 Oct 16;6(20):1901072.
Fig 2The master-key is decrypted using the passphrase and stored in volatile memory.

The Trusted Server: A secure computational environment for privacy compliant evaluations on plain personal data

PLoS One. 2018;13(9):e0202752.
Fig. 6Performance summary. Schematic illustration of the performance summary for with and without graphene based devices. The device without graphene can show volatile switching and the device with graphene-barrier can show nonvolatile switching.

Transformation of threshold volatile switching to quantum point contact originated nonvolatile switching in graphene interface controlled memory devices

Nanoscale Adv. 2019 Sep 11;1(9):3753-3760.
Figure 3Volatile and non-volatile memory performance of a CeO2:Gd device.

The current change was observed by applying a sequence of positive voltage pulses with a width of 0.1 s at intervals of 8 seconds s. The read voltage was 0.1 V.

Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

Sci Rep. 2015;5:13599.